PAGE . 4

STAD-JUL.19.2006

PJD06N03

Fig.6 - Gate Charge Waveform

Fig.8 - Threshold Voltage vs Temperature

Fig.7 - Gate Charge

Fig.9 - Breakdown Voltage vs Junction Temperature

Fig.10 - Source-Drain Diode Forward Voltage

Qgd

Qgs

Qg

Qsw

Vgs(th)

Vgs

Qg

Qg(th)

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

V =0V

GS

T =125 C

J

O

T =25 C

J

O

T =-55 C

J

O

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

-50

-25

0

25

50

75

100

125

150

I =250uA

D

25

26

27

28

29

-50

-25

0

25

50

75

100

125

150

I =250uA

D

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

V =15V

I =15A

DS

D

Copyright PanJit International, Inc 2006

The information presented in this document is believed to be accurate and reliable. The specifications and information herein

are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit

does not convey any license under its patent rights or rights of others.

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