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MRF7S18170H Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc

Part No. MRF7S18170H
Description  RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF7S18170H Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc

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MRF7S18170HR3 MRF7S18170HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805-1880 MHz Bandwidth
Video Bandwidth
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
25
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 170 W CW
GF
0.4
dB
Deviation from Linear Phase in 75 MHz Bandwidth @ Pout = 170 W CW
Φ
2.5
°
Group Delay @ Pout = 170 W CW, f = 1840 MHz
Delay
4.2
ns
Part-to-Part Insertion Phase Variation @ Pout = 170 W CW,
f = 1840 MHz
ΔΦ
15
°
Gain Variation over Temperature
ΔG
0.015
dB/°C
Output Power Variation over Temperature
ΔP1dB
0.01
dBm/°C


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