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LMX2531LQ1500E Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2531LQ1500E
Description  High Performance Frequency Synthesizer System with Integrated VCO
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2531LQ1500E Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (V
CC = 3.0 V, -40˚C
≤ T
A
≤ 85 ˚C; f
Fout = 1500 MHz, except as specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Current Consumption
I
CC
Power Supply Current
Divider Disabled
34
41
mA
Divider Enabled
37
46
I
CCPD
Power Down Current
CE=0V, Part Initialized
7
µA
Oscillator
I
IHOSC
Oscillator Input High Current
V
IH = 2.75 V
100
µA
I
ILOSC
Oscillator Input Low Current
V
IL = 0
-100
µA
f
OSCin
Frequency Range
5
80
MHz
v
OSCin
Oscillator Sensitivity
0.5
2.0
Vpp
PLL
f
COMP
Phase Detector Frequency
32
MHz
I
CPout
Charge Pump
Output Current Magnitude
ICP = 0
90
µA
ICP = 1
180
µA
ICP = 3
360
µA
ICP = 15
1440
µA
I
CPoutTRI
CP TRI-STATE Current
0.4 V < V
CPout < 2.0 V
2
10
nA
I
CPoutMM
Charge Pump
Sink vs. Source Mismatch
V
CPout = 1.2 V
T
A = 25˚C
28
%
I
CPoutV
Charge Pump
Current vs. CP Voltage Variation
0.4 V < V
CPout < 2.0 V
T
A = 25˚C
4%
I
CPoutT
CP Current vs. Temperature
Variation
V
CPout = 1.2 V
8
%
LN(f)
Normalized Phase Noise
Contribution
(Note 2)
ICP = 1X Charge Pump Gain
4 kHz Offset
-202
dBc/Hz
ICP = 16X Charge Pump Gain
4 kHz Offset
-212
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