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IRHM57Z60 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRHM57Z60
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRHM57Z60 Datasheet(HTML) 1 Page - International Rectifier

  IRHM57Z60 Datasheet HTML 1Page - International Rectifier IRHM57Z60 Datasheet HTML 2Page - International Rectifier IRHM57Z60 Datasheet HTML 3Page - International Rectifier IRHM57Z60 Datasheet HTML 4Page - International Rectifier IRHM57Z60 Datasheet HTML 5Page - International Rectifier IRHM57Z60 Datasheet HTML 6Page - International Rectifier IRHM57Z60 Datasheet HTML 7Page - International Rectifier IRHM57Z60 Datasheet HTML 8Page - International Rectifier  
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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
35*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
35*
IDM
Pulsed Drain Current ➀
140
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
500
mJ
IAR
Avalanche Current ➀
35
A
EAR
Repetitive Avalanche Energy ➀
25
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
1.1
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in./1.6 mm from case for 10s)
Weight
9.3 (Typical)
g
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED
IRHM57Z60
POWER MOSFET
THRU-HOLE (TO-254AA)
08/06/02
www.irf.com
1
30V, N-CHANNEL
* Current is limited by internal wire diameter
c
TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
IRHM57Z60
100K Rads (Si)
0.0095
Ω 35A*
IRHM53Z60
300K Rads (Si)
0.0095
Ω 35A*
IRHM54Z60
600K Rads (Si)
0.0095
Ω 35A*
IRHM58Z60
1000K Rads (Si)
0.010
35A*
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
For footnotes refer to the last page
4
4#
TO-254AA
Pre-Irradiation
n Light Weight
PD - 93786B


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