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IRHM57Z60 Datasheet(PDF) 3 Page - International Rectifier

Part No. IRHM57Z60
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHM57Z60 Datasheet(HTML) 3 Page - International Rectifier

  IRHM57Z60 Datasheet HTML 1Page - International Rectifier IRHM57Z60 Datasheet HTML 2Page - International Rectifier IRHM57Z60 Datasheet HTML 3Page - International Rectifier IRHM57Z60 Datasheet HTML 4Page - International Rectifier IRHM57Z60 Datasheet HTML 5Page - International Rectifier IRHM57Z60 Datasheet HTML 6Page - International Rectifier IRHM57Z60 Datasheet HTML 7Page - International Rectifier IRHM57Z60 Datasheet HTML 8Page - International Rectifier  
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3
Pre-Irradiation
IRHM57Z60
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
30
30
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.5
4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
10
25
µA
VDS= 24V, VGS =0V
RDS(on)
Static Drain-to-Source
0.004
0.005
VGS = 12V, ID =35A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
0.0095
0.01
VGS = 12V, ID =35A
On-State Resistance (TO-254)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHM57Z60, IRHM53Z60 and IRHM54Z60
2. Part number IRHM58Z60
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
1.2
1.2
V
VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
Br
I
AU
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
V
DS
(V)
MeV/(mg/cm2))
(MeV)
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
37.9
255
33.4
30
30
30
25
20
I
59.4
290
28.8
25
25
20
15
10
Au
80.3
313
26.5
22.5
22.5
15
10


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