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IRHM57Z60 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRHM57Z60
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRHM57Z60 Datasheet(HTML) 2 Page - International Rectifier

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IRHM57Z60
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.028
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.0095
VGS = 12V, ID = 35A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
45
S ( )VDS > 15V, IDS = 35A ➃
IDSS
Zero Gate Voltage Drain Current
10
VDS= 24V ,VGS=0V
——
25
VDS = 24V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
200
VGS =12V, ID = 35A
Qgs
Gate-to-Source Charge
55
nC
VDS = 15V
Qgd
Gate-to-Drain (‘Miller’) Charge
40
td(on)
Turn-On Delay Time
35
VDD = 15V, ID = 35A
tr
Rise Time
125
VGS =12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
80
tf
Fall Time
50
LS + LD
Total Inductance
6.8
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
9720
VGS = 0V, VDS = 25V
Coss
Output Capacitance
4230
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
56
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
0.50
RthCS
Case-to-Sink
0.21
°C/W
RthJA
Junction-to-Ambient
48
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
35*
ISM
Pulse Source Current (Body Diode) ➀
140
VSD
Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 35A, VGS = 0V ➃
trr
Reverse Recovery Time
153
ns
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
324
nC
VDD ≤ 25V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by internal wire diameter


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