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IRFB4019PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFB4019PBF
Description  DIGITAL AUDIO MOSFET
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB4019PBF Datasheet(HTML) 1 Page - International Rectifier

  IRFB4019PBF Datasheet HTML 1Page - International Rectifier IRFB4019PBF Datasheet HTML 2Page - International Rectifier IRFB4019PBF Datasheet HTML 3Page - International Rectifier IRFB4019PBF Datasheet HTML 4Page - International Rectifier IRFB4019PBF Datasheet HTML 5Page - International Rectifier IRFB4019PBF Datasheet HTML 6Page - International Rectifier IRFB4019PBF Datasheet HTML 7Page - International Rectifier  
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www.irf.com
1
3/2/06
IRFB4019PbF
Notes
 through … are on page 2
PD - 97075
DIGITAL AUDIO MOSFET
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 200W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
S
D
G
TO-220AB
D
S
D
G
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Power Dissipation
f
W
PD @TC = 100°C
Power Dissipation
f
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
f
–––
1.88
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
f
–––
62
Max.
12
51
±20
150
17
80
40
0.5
10lb
xin (1.1Nxm)
-55 to + 175
300
VDS
150
V
RDS(ON) typ. @ 10V
80
m
:
Qg typ.
13
nC
Qsw typ.
5.1
nC
RG(int) typ.
2.4
TJ max
175
°C
Key Parameters


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