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IRFB4019PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFB4019PBF
Description  DIGITAL AUDIO MOSFET
Download  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB4019PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFB4019PbF
2
www.irf.com
S
D
G
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.46mH, RG = 25Ω, IAS = 10A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.19
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
80
95
m
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-13
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
14
–––
–––
S
Qg
Total Gate Charge
–––
13
20
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.95
–––
nC
Qgd
Gate-to-Drain Charge
–––
4.1
–––
Qgodr
Gate Charge Overdrive
–––
4.7
–––
See Fig. 6 and 19
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.1
–––
RG(int)
Internal Gate Resistance
–––
2.4
–––
td(on)
Turn-On Delay Time
–––
7.0
–––
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
12
–––
ns
tf
Fall Time
–––
7.8
–––
Ciss
Input Capacitance
–––
800
–––
Coss
Output Capacitance
–––
74
–––
pF
Crss
Reverse Transfer Capacitance
–––
19
–––
Coss
Effective Output Capacitance
–––
99
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ãg
A
EAR
Repetitive Avalanche Energy
g
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
–––
17
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
51
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
64
96
ns
Qrr
Reverse Recovery Charge
–––
160
240
nC
–––
73
See Fig. 14, 15, 17a, 17b
ID = 10A
Typ.
Max.
ƒ = 1.0MHz,
See Fig.5
TJ = 25°C, IF = 10A
di/dt = 100A/µs
e
TJ = 25°C, IS = 10A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A e
VDS = VGS, ID = 50µA
VDS = 150V, VGS = 0V
VGS = 0V, VDS = 0V to 120V
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
ID = 10A
VGS = 0V
MOSFET symbol
RG = 2.4Ω
VDS = 10V, ID = 10A
Conditions
and center of die contact
VDD = 75V, VGS = 10VÃe
VDS = 75V
VDS = 50V


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