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BLV862 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BLV862
Description  UHF linear push-pull power transistor
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV862 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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1999 Jun 25
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under specified RF operating conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCEO
collector-emitter voltage
open base
30
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
25
A
Ptot
total power dissipation
Tmb =25 °C
350
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Ptot = 350 W; note 1
0.5
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.15
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Tmb =25 °C.
(2) Th =70 °C.
handbook, halfpage
102
10
1
MBK231
110
102
VCE (V)
IC
(A)
(1)
(2)
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short time operation during mismatch.
Fig.3 Power derating curves.
handbook, halfpage
0
40
80
160
400
Ptot
(W)
300
100
0
200
MGD528
120
Th (°C)
(2)
(1)


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