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AD8003 Datasheet(PDF) 5 Page - Analog Devices

Part No. AD8003
Description  Triple, 1.5 GHz Op Amp
Download  16 Pages
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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AD8003 Datasheet(HTML) 5 Page - Analog Devices

 
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AD8003
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
11 V
Power Dissipation
See Figure 3
Common-Mode Input Voltage
−VS − 0.7 V to +VS + 0.7 V
Differential Input Voltage
±V
S
Exposed Paddle Voltage
−VS
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature (Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified
for device soldered in circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
Unit
24-Lead LFCSP_VQ
70
°C/W
Maximum Power Dissipation
The maximum safe power dissipation for the AD8003 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the plastic changes its properties. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the AD8003. Exceeding a junction temperature of 175°C for
an extended period can result in changes in silicon devices,
potentially causing degradation or loss of functionality.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the die
due to the AD8003 drive at the output. The quiescent power is
the voltage between the supply pins (VS) times the quiescent
current (IS).
PD = Quiescent Power + (Total Drive Power – Load Power)
()
L
2
OUT
L
OUT
S
S
S
D
R
V
R
V
2
V
I
V
P
⎟⎟
⎜⎜
×
+
×
=
RMS output voltages should be considered. If RL is referenced to
−VS, as in single-supply operation, the total drive power is VS ×
IOUT. If the rms signal levels are indeterminate, consider the
worst case, when VOUT = VS/4 for RL to midsupply.
() (
)
L
S
S
S
D
R
/
V
I
V
P
2
4
+
×
=
In single-supply operation with RL referenced to −VS, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA.
In addition, more metal directly in contact with the package
leads and exposed paddle from metal traces, through holes,
ground, and power planes reduce θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the exposed paddle,
4 mm × 4 mm LFCSP_VQ (70°C/W) package on a JEDEC
standard 4-layer board. θJA values are approximations.
0
3.0
–55
125
AMBIENT TEMPERATURE (°C)
0.5
1.0
1.5
2.0
2.5
–35
–15
5
25
45
65
85
105
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation and loss of functionality.


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