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ZXTDCM832 Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZXTDCM832
Description  MPPS Miniature Package Power Solutions DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZXTDCM832 Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZXTDCM832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
100
190
V
IC=100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
50
65
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
7.5
8.2
V
IE=100 A
Collector Cut-Off Current
ICBO
25
nA
VCB=80V
Emitter Cut-Off Current
IEBO
25
nA
VEB=6V
Collector Emitter Cut-Off Current
ICES
25
nA
VCES=40V
Collector-Emitter Saturation
Voltage
VCE(sat)
10
70
145
115
225
270
20
100
200
220
300
320
mV
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=50mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA*
IC=3A, IB=100mA*
IC=4A, IB=200mA*
Base-Emitter Saturation Voltage
VBE(sat)
1.00
1.05
V
IC=4A, IB=200mA*
Base-Emitter Turn-On Voltage
VBE(on)
0.94
1.00
V
IC=4A, VCE=2V*
Static Forward Current Transfer
Ratio
hFE
200
300
200
100
400
450
400
225
40
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition Frequency
fT
100
165
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
12
20
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
170
ns
VCC=10V, IC=1A
IB1=IB2=10mA
Turn-Off Time
t(off)
750
ns
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%


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