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ZXTDCM832 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZXTDCM832
Description  MPPS Miniature Package Power Solutions DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZXTDCM832 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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ZXTDCM832
ISSUE 1 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
RθJA
83.3
°C/W
Junction to Ambient (b)(f)
RθJA
51
°C/W
Junction to Ambient (c)(f)
RθJA
125
°C/W
Junction to Ambient (d)(f)
RθJA
111
°C/W
Junction to Ambient (d)(g)
RθJA
73.5
°C/W
Junction to Ambient (e)(g)
RθJA
41.7
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7.5
V
Peak Pulse Current
ICM
6A
Continuous Collector Current (a)(f)
IC
4A
Base Current
IB
1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.


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