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ZXMP6A17DN8 Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZXMP6A17DN8
Description  DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZXMP6A17DN8 Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZXMP6A17DN8
PROVISIONAL ISSUE A - SEPTEMBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-60
V
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1.0
AVDS=-60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-0.8
V
I
D
=-250 A, VDS=VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.125
0.190
VGS=-10V, ID=-2.2A
VGS=-4.5V, ID=-1.8A
Forward Transconductance (1)(3)
gfs
4.9
S
VDS=-15V,ID=-2.2A
DYNAMIC (3)
Input Capacitance
Ciss
670
pF
VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
46.7
pF
Reverse Transfer Capacitance
Crss
28.0
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
1.9
ns
VDD =-30V, ID=-1A
RG(6.0Ω,VGS=-10V
Rise Time
tr
22.4
ns
Turn-Off Delay Time
td(off)
20.0
ns
Fall Time
tf
16.0
ns
Gate Charge
Qg
7.3
nC
VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge
Qg
15.1
nC
VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge
Qgs
1.8
nC
Gate-Drain Charge
Qgd
1.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
-0.85
-0.95
V
TJ=25°C, IS=-2A,
VGS=0V
Reverse Recovery Time (3)
trr
26.4
ns
TJ=25°C, IF=-1.7A,
di/dt= 100A/
µs
Reverse Recovery Charge (3)
Qrr
32.7
nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.


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