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SI7842DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7842DP Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 5 page  Si7842DP Vishay Siliconix www.vishay.com 4 Document Number: 71617 S-31728—Rev. B, 18-Aug-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0 2468 10 TJ = 150_C TJ = 25_C ID = 7.5 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ - Temperature (_C) 0 60 100 20 40 Single Pulse Power Time (sec) 80 110 0.01 0.001 0.1 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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