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SI7842DP Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI7842DP
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7842DP Datasheet(HTML) 4 Page - Vishay Siliconix

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Si7842DP
Vishay Siliconix
www.vishay.com
4
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0
2468
10
TJ = 150_C
TJ = 25_C
ID = 7.5 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
- 0.8
- 0.6
- 0.4
- 0.2
- 0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 mA
Threshold Voltage
TJ - Temperature (_C)
0
60
100
20
40
Single Pulse Power
Time (sec)
80
110
0.01
0.001
0.1
10-3
10-2
1
10
600
10-1
10-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 60_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM


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