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SI7842DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7842DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page ![]() Si7842DP Vishay Siliconix Document Number: 71617 S-31728—Rev. B, 18-Aug-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 10 thru 4 V TC = 125_C -55 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 3 V 0 200 400 600 800 1000 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 3 6 9 12 15 0.000 0.008 0.016 0.024 0.032 0.040 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 15 V ID = 7.5 A ID - Drain Current (A) VGS = 10 V ID = 7.5 A VGS = 10 V VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) |