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SI7842DP Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI7842DP
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7842DP Datasheet(HTML) 3 Page - Vishay Siliconix

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Si7842DP
Vishay Siliconix
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10 thru 4 V
TC = 125_C
-55
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
3 V
0
200
400
600
800
1000
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
12
15
0.000
0.008
0.016
0.024
0.032
0.040
04
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 7.5 A
ID - Drain Current (A)
VGS = 10 V
ID = 7.5 A
VGS = 10 V
VGS = 4.5 V
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)


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