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SI7842DP Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7842DP Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  FEATURES D LITTLE FOOT Plust Schottky D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Bus and Logic DC-DC Si7842DP Vishay Siliconix Document Number: 71617 S-31728—Rev. B, 18-Aug-03 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.022 @ VGS = 10 V 10 30 0.030 @ VGS = 4.5 V 8.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 3.0 N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 Schottky Diode 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK SO-8 Ordering Information: Si7842DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 10 6.3 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 6.0 5.0 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction)a IS 2.9 1.1 Maximum Power Dissipationa TA = 25_C PD 3.5 1.4 W Maximum Power Dissipationa TA = 70_C PD 2.2 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Schottky Parameter Symbol Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 26 35 26 35 Maximum Junction-to-Ambienta Steady-State RthJA 60 85 60 85 _C/W Maximum Junction-to-Case (Drain) Steady-State RthJC 3.9 5.5 3.9 5.5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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