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IS61SF25616 Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part No. IS61SF25616
Description  256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61SF25616 Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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IS61SF25616
IS61SF25618
ISSI®
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
INTERLEAVED BURST ADDRESS TABLE (MODE = VCC or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
A1 A0
A1 A0
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
–0.5 to VCCQ + 0.3
V
VIN
Voltage Relative to GND for
–0.5 to VCC + 0.5
V
for Address and Control Inputs
VCC
Voltage on Vcc Supply Relatiive to GND
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuitry to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of any
voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
0,0
1,0
0,1
A1', A0' = 1,1


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