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IS41LV32256 Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part No. IS41LV32256
Description  256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Download  19 Pages
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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IS41LV32256 Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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6
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
IS41LV32256
ISSI®
DC CHARACTERISTICS (TA = 0°C to 70°C, VCC = 3.3V ± 0.3V)
-28
-30
-35
Symbol
Parameter
Condition
Min.
Max.
Min.
Max.
Min.
Max.
Units
VIH
Input HIGH (Logic 1) Voltage, All Inputs
2.0 Vcc + 0.5
2.0 Vcc + 0.5
2.0 Vcc + 0.5
V
VIL
Input LOW (Logic 1) Voltage, All Inputs
—–0.5
0.8
–0.5
0.8
–0.5
0.8
V
VOH
Output HIGH Voltage
IOH = –2 mA
2.4
Vcc
2.4
Vcc
2.4
Vcc
V
VOL
Output LOW Voltage
IOL = 2 mA
00.4
00.4
00.4
V
ILI
Input Leakage Current
0V < VIN < VCC
–10
10
–10
10
–10
10
µA
ILO
Output Leakage Current
0V < VOUT < 3.6V;
–10
10
–10
10
–10
10
µA
Output Disable
ICC1
Average Power Supply Current
RAS, CAS Cycling;
250
250
240
mA
(Operating)(2,3,15,16)
tRC = Min.
ICC2
Power Supply Current (Standby)
RAS, CAS = VIH
2.5
2.5
2.5
mA
Icc3
Average Power Supply Current
RAS = Cycling;
250
250
240
mA
(
RAS-Only Refresh)(2,3,15,16)
CAS = VIH; tRC = Min.
ICC4
Average Power Supply Current
RAS = VIL;
230
230
220
mA
(Fast Page Mode)(2,3,15,18)
CAS = Cycling; tPC = Min.
ICC5
Average Power Supply Current
RAS = Cycling;
250
250
240
mA
(
CAS-before-RASRefresh)(2,3,15.16)
CAS-before-RAS
ICC6
CMOS Standby Current
RAS, CAS = VCC –0.2V —
600
600
600
µA
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.)
-28
-30
-35
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Units
tRC
Random READ or WRITE Cycle Time
48
53
60
ns
tRAC
Access Time from
RAS(6, 7)
28
30
35
ns
tCAC
Access Time from
CAS(6, 8, 15)
9
9
10
ns
tAA
Access Time from Column-Address(6)
15
16
18
ns
tRAS
RAS Pulse Width
28
10K
30
10K
35
10K
ns
tRP
RAS Precharge Time
17
18
20
ns
tCAS
CAS Pulse Width(26)
5
10K
5
10K
6
10K
ns
tCP
CAS Precharge Time(9, 25)
5
5
5
ns
tCSH
CAS Hold Time (21)
28
30
35
ns
tRCD
RAS to CAS Delay Time(10, 20)
10
19
10
21
11
28
ns
tASR
Row-Address Setup Time
0
0
0
ns
tRAH
Row-Address Hold Time
6
6
7
ns
tASC
Column-Address Setup Time(20)
0
0
0
ns
tCAH
Column-Address Hold Time(20)
5
5
6
ns
tAR
Column-Address Hold Time
21
22
25
ns
(referenced to
RAS)
tRAD
RAS to Column-Address Delay Time(11)
813
8
15
916
ns
tRAL
Column-Address to
RAS Lead Time
15
16
18
ns
tRPC
RAS to CAS Precharge Time
0
0
0
ns
tRSH
RAS Hold Time(27)
7
7
8
ns
(Continued)


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