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IS41LV32256 Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part No. IS41LV32256
Description  256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Download  19 Pages
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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IS41LV32256 Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

 
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Integrated Silicon Solution, Inc.
5
Rev. A
09/29/00
IS41LV32256
ISSI®
POWER-ON
The initial application of the VCC supply requires a 200-µs
wait followed by a minimum of any eight initialization
cycles containing a
RAS clock. During Power-On, the VCC
current is dependent on the input levels of
RAS and CAS.
It is recommended that
RAS and CAS track with VCC or be
held at a valid VIH during Power-On to avoid current
surges.
RECOMMENDED OPERATING CONDITIONS(1) (TA = 0°C to 70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Power Supply
3.0
3.3
3.6
V
VIH
Input High Voltage
2.4
VCC + 0.5
V
VIL
Input Low Voltage
–0.5
0.4
V
Note:
1. Voltages are referenced to GND.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
tA
Ambient Temperature Under Bias
–1.0 to +80
°C
tSTG
Storage Temperature
–50 to +125
°C
VT
Voltage Relative to GND
–1.0 to +5.5
V
IOUT
Data Output Current
50
mA
PD
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN
Input Capacitance
5
pF
CIO
Data Input/Output Capacitance
7
pF
Notes:
1. Capacitance is sampled and 100% tested.
2. Test conditions: TA = 25°C, f = 1 MHz, VCC = 3.3V.


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