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BLV2046 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLV2046 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1997 Aug 22 5 Philips Semiconductors Product specification UHF power transistor BLV2046 Fig.4 Power gain expansion as a function of drive power; typical values. VCE = 26 V; f = 1990 MHz. (1) ICQ = 600 mA. (2) ICQ = 400 mA. (3) ICQ = 200 mA. (4) ICQ = 100 mA. handbook, halfpage 0 Gp (dB) PD (W) 10 2 4 6 8 MDA213 10−3 10−2 10−1 110 (2) (3) (4) (1) Fig.5 Power gain expansion as a function of load power; typical values. VCE =26V; f1 = 1990 MHz; f2 = 1990.1 MHz. (1) ICQ = 600 mA. (2) ICQ = 400 mA. (3) ICQ = 200 mA. (4) ICQ = 100 mA. handbook, halfpage 10 0 PL (PEP) (W) Gp (dB) 0 MDA214 110 10 2 2 4 6 8 (2) (3) (4) (1) Fig.6 Intermodulation distortion as a function of load power; typical values. VCE =26V; f1 = 1990 MHz; f2 = 1990.1 MHz. (1) ICQ = 100 mA. (2) ICQ = 200 mA. (3) ICQ = 400 mA. (4) ICQ = 600 mA. handbook, halfpage 0 020 60 −50 40 −40 −30 −20 −10 MDA215 d3 (dBc) PL (PEP) (W) (2) (1) (3) (4) Fig.7 Intermodulation distortion as a function of load power; typical values. VCE = 26 V; ICQ = 200 mA; f1 = 1990 MHz; f2 = 1990.1 MHz. handbook, halfpage 0 d3 d5 0 −20 −40 −60 20 40 60 MDA216 dim (dBc) PL (PEP) (W) |
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