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BLV194 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BLV194
Description  UHF power transistor
Download  11 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV194 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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January 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV194
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CEO
collector-emitter breakdown voltage
IB = 0; IC =40mA
16
−−
V
V(BR)CES
collector-emitter breakdown voltage
IC = 20 mA; VBE =0
32
−−
V
V(BR)EBO
emitter-base breakdown voltage
IC = 0; IE = 5 mA
3
−−
V
ICER
collector leakage current
RBE = 700 Ω; VCE =16V
−−
1mA
hFE
DC current gain
IC = 1.2 A; VCE = 10 V (note 1)
25
70
Cc
collector capacitance
IE =ie = 0; VCB = 12.5 V; f = 1 MHz
26
pF
Cre
feedback capacitance
IC = 0; VCB = 12.5 V; f = 1 MHz
19
pF
Cc-mb
collector-mounting base capacitance
2
pF
Fig.4
DC current gain as a function of collector
current, typical values.
VCE =10V.
Measured under pulse conditions: tp ≤ 200 µs;
δ≤ 0.02.
handbook, halfpage
MRC098
0
20
40
60
80
100
02
IC (A)
4
hFE
6
Fig.5
Collector capacitance as a function of
collector-base voltage, typical values.
IE =ie = 0; f = 1 MHz.
handbook, halfpage
MRC095
0
20
40
60
048
Cc
(pF)
VCB (V)
12
16


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