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BLV194 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLV194 Datasheet(HTML) 4 Page - NXP Semiconductors |
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January 1993 4 Philips Semiconductors Product specification UHF power transistor BLV194 CHARACTERISTICS Tj = 25 °C, unless otherwise specified. Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CEO collector-emitter breakdown voltage IB = 0; IC =40mA 16 −− V V(BR)CES collector-emitter breakdown voltage IC = 20 mA; VBE =0 32 −− V V(BR)EBO emitter-base breakdown voltage IC = 0; IE = 5 mA 3 −− V ICER collector leakage current RBE = 700 Ω; VCE =16V −− 1mA hFE DC current gain IC = 1.2 A; VCE = 10 V (note 1) 25 70 − Cc collector capacitance IE =ie = 0; VCB = 12.5 V; f = 1 MHz − 26 − pF Cre feedback capacitance IC = 0; VCB = 12.5 V; f = 1 MHz − 19 − pF Cc-mb collector-mounting base capacitance − 2 − pF Fig.4 DC current gain as a function of collector current, typical values. VCE =10V. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0.02. handbook, halfpage MRC098 0 20 40 60 80 100 02 IC (A) 4 hFE 6 Fig.5 Collector capacitance as a function of collector-base voltage, typical values. IE =ie = 0; f = 1 MHz. handbook, halfpage MRC095 0 20 40 60 048 Cc (pF) VCB (V) 12 16 |
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