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BLV194 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BLV194
Description  UHF power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV194 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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January 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV194
APPLICATION INFORMATION
RF performance at Th =25 °C in a common emitter test circuit.
Rth j-mb = 0.4 K/W.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
GP
(dB)
η
C
(%)
CW, class-AB
900
12.5
10
16
≥ 7
typ. 8.5
≥ 50
typ. 57
Fig.6
Power gain and efficiency as functions of
load power, typical values.
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V;
f = 900 MHz.
handbook, halfpage
MRC096
0
4
8
12
16
0
20
40
60
80
04
8
12
PL (W)
Gp
(dB)
Gp
16
20
η
(%)
η
Ruggedness in class-AB operation
The BLV194 is capable of withstanding a load mismatch
corresponding to VSWR = 20:1 through all phases at
rated output power under the following conditions:
VCE = 15.5 V; Th =25 °C; Rth j-mb = 0.4 K/W; f = 900 MHz.
Fig.7
Load power as a function of input power,
typical values.
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V;
f = 900 MHz.
handbook, halfpage
MRC101
0
4
8
12
16
20
01
PL
(W)
23
PIN (W)
4


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