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BLV194 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLV194 Datasheet(HTML) 5 Page - NXP Semiconductors |
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January 1993 5 Philips Semiconductors Product specification UHF power transistor BLV194 APPLICATION INFORMATION RF performance at Th =25 °C in a common emitter test circuit. Rth j-mb = 0.4 K/W. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) GP (dB) η C (%) CW, class-AB 900 12.5 10 16 ≥ 7 typ. 8.5 ≥ 50 typ. 57 Fig.6 Power gain and efficiency as functions of load power, typical values. Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz. handbook, halfpage MRC096 0 4 8 12 16 0 20 40 60 80 04 8 12 PL (W) Gp (dB) Gp 16 20 η (%) η Ruggedness in class-AB operation The BLV194 is capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases at rated output power under the following conditions: VCE = 15.5 V; Th =25 °C; Rth j-mb = 0.4 K/W; f = 900 MHz. Fig.7 Load power as a function of input power, typical values. Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz. handbook, halfpage MRC101 0 4 8 12 16 20 01 PL (W) 23 PIN (W) 4 |
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