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BLV193 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. BLV193
Description  UHF power transistor
Download  14 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV193 Datasheet(HTML) 6 Page - NXP Semiconductors

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March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV193
APPLICATION INFORMATION
RF performance at Th =25 °C in a common emitter test circuit; Rth j-mb = 0.4 K/W.
Note
1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(A)
PL
(W)
GP
(dB)
ηc
(%)
dim
(dB)
(note 1)
c.w. class-AB
900
12.5
0.01
12
≥ 6.5
typ. 7.5
> 50
typ. 60
c.w. class-A
900
12
1.3
6 (PEP)
typ. 11
typ.
−30
Fig.7
Gain and efficiency as functions of load
power, typical values.
Class-AB operation; VCE = 12.5 V; f = 900 MHz;
ICQ =10mA.
handbook, halfpage
MRA555
0
2
4
6
8
10
0
20
40
60
80
100
048
Gp
(dB)
Gp
12
PL (W)
16
η
C
(%)
η
C
Ruggedness in class-AB operation
The BLV193 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases under
the following conditions:
VCE = 15.5 V, f = 900 MHz,
Th =25 °C, Rth j-mb = 0.4 K/W, and
rated output power.
Fig.8
Load power as a function of drive power,
typical values.
Class-AB operation; VCE = 12.5 V; f = 900 MHz;
ICQ =10mA.
handbook, halfpage
MRA551
0
4
8
12
16
012
PD (W)
3
PL
(W)
4


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