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MUBW30-06A7 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. MUBW30-06A7
Description  Converter - Brake - Inverter Module (CBI2)
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

MUBW30-06A7 Datasheet(HTML) 2 Page - IXYS Corporation

  MUBW30-06A7 Datasheet HTML 1Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 2Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 3Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 4Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 5Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 6Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 7Page - IXYS Corporation MUBW30-06A7 Datasheet HTML 8Page - IXYS Corporation  
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© 2001 IXYS All rights reserved
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MUBW 30-06 A7
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C =
25°C50
A
I
C80
T
C =
80°C35
A
RBSOA
V
GE = ±15 V; RG = 33 Ω; TVJ = 125°CICM =
60
A
Clamped inductive load; L = 100 µH
V
CEK ≤ VCES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C10
µs
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
180
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 30 A; VGE = 15 V; TVJ =
25°C
1.9
2.3
V
T
VJ = 125°C
2.2
V
V
GE(th)
I
C = 0.7 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
0.6
mA
T
VJ = 125°C
0.4
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
50
ns
t
r
50
ns
t
d(off)
270
ns
t
f
40
ns
E
on
1.4
mJ
E
off
1.0
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
1600
pF
Q
Gon
V
CE = 300V; VGE = 15 V; IC = 30 A
94
nC
R
thJC
(per IGBT)
0.7 K/W
Inductive load, T
VJ = 125°C
V
CE = 300 V; IC = 30 A
V
GE =
±15 V; R
G = 33 Ω
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
T
C =
25°C72
A
I
F80
T
C =
80°C45
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F = 30 A; VGE = 0 V; TVJ =
25°C
1.6
V
T
VJ = 125°C
1.2
V
I
RM
I
F = 30 A; diF/dt = -500 A/µs; TVJ = 125°C25
A
t
rr
V
R = 300 V; VGE = 0 V
90
ns
R
thJC
(per diode)
1.19 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J = 125°C)
V
0 = 1.19 V; R0 = 9 mΩ
T1 - T6 / D1 - D6
IGBT (typ. at V
GE = 15 V; TJ = 125°C)
V
0 = 0.95 V; R0 = 42 mΩ
Free Wheeling Diode (typ. at T
J = 125°C)
V
0 = 0.89 V; R0 = 8 mΩ
T7 / D7
IGBT (typ. at V
GE = 15 V; TJ = 125°C)
V
0 = 0.99 V; R0 = 81 mΩ
Free Wheeling Diode (typ. at T
J = 125°C)
V
0 = 1.07 V; R0 = 23 mΩ
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1 = 0.106 J/K; Rth1 = 1.06 K/W
C
th2 = 0.79 J/K; Rth2 = 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1 = 0.156 J/K; Rth1 = 0.545 K/W
C
th2 = 1.164 J/K; Rth2 = 0.155 K/W
Free Wheeling Diode (typ.)
C
th1 = 0.116 J/K; Rth1 = 0.973 K/W
C
th2 = 0.88 J/K; Rth2 = 0.217 K/W
T7 / D7
IGBT (typ.)
C
th1 = 0.077 J/K; Rth1 = 1.111 K/W
C
th2 = 0.732 J/K; Rth2 = 0.279 K/W
Free Wheeling Diode (typ.)
C
th1 = 0.043 J/K; Rth1 = 2.738 K/W
C
th2 = 0.54 J/K; Rth2 = 0.462 K/W


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