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MUBW30-06A7 Datasheet(PDF) 2 Page - IXYS Corporation |
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MUBW30-06A7 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 8 page © 2001 IXYS All rights reserved 2 - 8 MUBW 30-06 A7 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 600 V V GES Continuous ± 20 V V GEM Transient ± 30 V I C25 T C = 25°C50 A I C80 T C = 80°C35 A RBSOA V GE = ±15 V; RG = 33 Ω; TVJ = 125°CICM = 60 A Clamped inductive load; L = 100 µH V CEK ≤ VCES t SC V CE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C10 µs (SCSOA) non-repetitive P tot T C = 25°C 180 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 30 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V T VJ = 125°C 2.2 V V GE(th) I C = 0.7 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES; VGE = 0 V; TVJ = 25°C 0.6 mA T VJ = 125°C 0.4 mA I GES V CE = 0 V; VGE = ± 20 V 200 nA t d(on) 50 ns t r 50 ns t d(off) 270 ns t f 40 ns E on 1.4 mJ E off 1.0 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 1600 pF Q Gon V CE = 300V; VGE = 15 V; IC = 30 A 94 nC R thJC (per IGBT) 0.7 K/W Inductive load, T VJ = 125°C V CE = 300 V; IC = 30 A V GE = ±15 V; R G = 33 Ω Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I F25 T C = 25°C72 A I F80 T C = 80°C45 A Symbol Conditions Characteristic Values min. typ. max. V F I F = 30 A; VGE = 0 V; TVJ = 25°C 1.6 V T VJ = 125°C 1.2 V I RM I F = 30 A; diF/dt = -500 A/µs; TVJ = 125°C25 A t rr V R = 300 V; VGE = 0 V 90 ns R thJC (per diode) 1.19 K/W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at T J = 125°C) V 0 = 1.19 V; R0 = 9 mΩ T1 - T6 / D1 - D6 IGBT (typ. at V GE = 15 V; TJ = 125°C) V 0 = 0.95 V; R0 = 42 mΩ Free Wheeling Diode (typ. at T J = 125°C) V 0 = 0.89 V; R0 = 8 mΩ T7 / D7 IGBT (typ. at V GE = 15 V; TJ = 125°C) V 0 = 0.99 V; R0 = 81 mΩ Free Wheeling Diode (typ. at T J = 125°C) V 0 = 1.07 V; R0 = 23 mΩ Thermal Response D11 - D16 Rectifier Diode (typ.) C th1 = 0.106 J/K; Rth1 = 1.06 K/W C th2 = 0.79 J/K; Rth2 = 0.239 K/W T1 - T6 / D1 - D6 IGBT (typ.) C th1 = 0.156 J/K; Rth1 = 0.545 K/W C th2 = 1.164 J/K; Rth2 = 0.155 K/W Free Wheeling Diode (typ.) C th1 = 0.116 J/K; Rth1 = 0.973 K/W C th2 = 0.88 J/K; Rth2 = 0.217 K/W T7 / D7 IGBT (typ.) C th1 = 0.077 J/K; Rth1 = 1.111 K/W C th2 = 0.732 J/K; Rth2 = 0.279 K/W Free Wheeling Diode (typ.) C th1 = 0.043 J/K; Rth1 = 2.738 K/W C th2 = 0.54 J/K; Rth2 = 0.462 K/W |
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