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MRF7S19100NR1 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc

Part No. MRF7S19100NR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF7S19100NR1 Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
46
62
32
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 12
μsec(on),
10% Duty Cycle, f = 1960 MHz
58
54
52
50
46
34
38
36
40
44
42
Actual
Ideal
60
56
48
30
P6dB = 52.12 dBm (162.60 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
P3dB = 51.61 dBm (144.90 W)
P1dB = 50.39 dBm
(109.50 W)
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
Figure 16. Pulsed CW Output Power
versus Input Power
46
62
32
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1000 mA
Pulsed CW, 12
μsec(on),
10% Duty Cycle, f = 1960 MHz
58
54
52
50
46
34
38
36
40
44
42
Actual
Ideal
60
56
48
30
P6dB = 52.81 dBm (190.80 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
P3dB = 52.20 dBm (165.90 W)
P1dB = 50.94 dBm
(124.20 W)
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
Figure 17. Pulsed CW Output Power
versus Input Power


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