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MRF7S19100NR1 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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MRF7S19100NR1 Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
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10 / 15 page 
10 RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 46 62 32 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 58 54 52 50 46 34 38 36 40 44 42 Actual Ideal 60 56 48 30 P6dB = 52.12 dBm (162.60 W) NOTE: Measured in a Peak Tuned Load Pull Fixture P3dB = 51.61 dBm (144.90 W) P1dB = 50.39 dBm (109.50 W) Test Impedances per Compression Level Zsource Ω Zload Ω P3dB 4.39 - j5.66 1.81 - j3.27 Figure 16. Pulsed CW Output Power versus Input Power 46 62 32 Pin, INPUT POWER (dBm) VDD = 32 Vdc, IDQ = 1000 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 58 54 52 50 46 34 38 36 40 44 42 Actual Ideal 60 56 48 30 P6dB = 52.81 dBm (190.80 W) NOTE: Measured in a Peak Tuned Load Pull Fixture P3dB = 52.20 dBm (165.90 W) P1dB = 50.94 dBm (124.20 W) Test Impedances per Compression Level Zsource Ω Zload Ω P3dB 4.39 - j5.66 1.81 - j3.27 Figure 17. Pulsed CW Output Power versus Input Power |
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