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MRF7S19100NR1 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MRF7S19100NR1 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
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8 / 15 page 
8 RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 TYPICAL CHARACTERISTICS 250 1010 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 109 108 106 90 110 130 150 170 190 107 210 230 Figure 11. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW 160 14 19 0 120 16 15 40 80 17 18 28 V IDQ = 1000 mA f = 1960 MHz Figure 12. MTTF Factor versus Junction Temperature 200 VDD = 32 V 24 V W-CDMA TEST SIGNAL 10 0.0001 100 0 PEAK −TO −AVERAGE (dB) Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal 10 1 0.1 0.01 0.001 24 68 W −CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF Input Signal Output Signal −60 −110 −10 −20 −30 −40 −50 −70 −80 −90 −100 3.84 MHz Channel BW 7.2 1.8 5.4 3.6 0 −1.8 −3.6 −5.4 −9 9 f, FREQUENCY (MHz) Figure 14. Single-Carrier W-CDMA Spectrum −7.2 −ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW |
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