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MRF7S19100NR1 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc

Part No. MRF7S19100NR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF7S19100NR1 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
TYPICAL CHARACTERISTICS
250
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
109
108
106
90
110
130
150
170
190
107
210
230
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
160
14
19
0
120
16
15
40
80
17
18
28 V
IDQ = 1000 mA
f = 1960 MHz
Figure 12. MTTF Factor versus Junction Temperature
200
VDD = 32 V
24 V
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK −TO −AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
W −CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
"5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
Input Signal
Output Signal
−60
−110
−10
−20
−30
−40
−50
−70
−80
−90
−100
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
−1.8
−3.6
−5.4
−9
9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
−7.2
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW


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