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MRF7S19100NR1 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

Part No. MRF7S19100NR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF7S19100NR1 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc

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MRF7S19100NR1 MRF7S19100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
−70
−10
1
100
−40
−50
10
−30
−20
−60
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO −TONE SPACING (MHz)
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
−1
−3
−5
30
Actual
Ideal
0
−2
−4
−3 dB = 47 W
300
14
20
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1000 mA
f = 1960 MHz
TC = −30_C
25
_C
85
_C
−30
_C
25
_C
85
_C
10
1
19
18
17
16
15
50
40
30
20
10
Gps
ηD
10
−55
−5
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3 −U
−10
−15
−20
−25
−40
−45
1
100
20
40
200
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−50
−30
−35
IM3 −L
IM5 −U
IM5 −L
IM7 −L
IM7 −U
50
60
100
20
50
45
40
35
30
25
VDD = 28 Vdc, IDQ = 1000 mA
f = 1960 MHz, Input PAR = 7.5 dB
−1 dB = 25 W
−2 dB = 35 W


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