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S29WS128P0PBAW003 Datasheet(PDF) 3 Page - SPANSION

Part # S29WS128P0PBAW003
Description  512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

S29WS128P0PBAW003 Datasheet(HTML) 3 Page - SPANSION

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This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
Publication Number S29WS-P_00
Revision A
Amendment 7
Issue Date November 8, 2006
Features
Single 1.8 V read/program/erase (1.70–1.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra
page access time
Full /Half drive output slew rate control
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory
array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around
and continuous burst read modes
Secured Silicon Sector region consisting of 128 words each
for factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
– WS512P/WS256P/WS128P: 84-ball FBGA
(11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector
Protection
Write operation status bits indicate program and erase
operation completion
Suspend and Resume commands for Program and Erase
operations
Unlock Bypass program command to reduce programming
time
Synchronous or Asynchronous program operation,
independent of burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Spansion S29WS512/256/128P are Mirrorbit
TM Flash products fabricated on 90 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero
latency on two separate banks using separate data and address pins. These products can operate up to
108 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless
applications requiring higher density, better performance and lowered power consumption.
Performance Characteristics
S29WS-P
MirrorBit
Flash Family
S29WS512P, S29WS256P, S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit)
1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
Data Sheet (Advance Information)
Read Access Times
Speed Option (MHz)
108
Max. Synch Access Time (tIACC)80
Max. Synch. Burst Access, ns (tBACC)7.6
Max. Asynch. Access Time, ns (tACC)80
Max OE# Access Time, ns (tOE)7.6
Current Consumption (typical values)
Continuous Burst Read @ 108 MHz
36 mA
Simultaneous Operation 108 MHz
40 mA
Program
20 mA
Standby Mode
20 µA
Typical Program & Erase Times
Single Word Programming
40 µs
Effective Write Buffer Programming (VCC) Per Word
9.4 µs
Effective Write Buffer Programming (VACC) Per Word
6 µs
Sector Erase (16 Kword Sector)
350 ms
Sector Erase (64 Kword Sector)
600 ms


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