This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-

ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document

may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication Number S30MS-P_00

Revision A

Amendment 7

Issue Date August 4, 2006

Distinctive Characteristics

Single Power Supply Operation

– 1.8 volt read, erase, and program operations

Bus widths - x8 and x16

Page Size

– Full Page Read

2K + 64 Byte

– Partial Page Read

512 + 16 Byte

Block (erase unit) Architecture

– Number of Blocks

1Gb: 1K blocks

512Mb: 512 blocks

–Block Size

128K + 4K Byte

Compatibility with NAND Flash I/O

– Provides pinout and command set compatibility with single-power

supply NAND flash

High-Performance Cache Register

– Cache Register matches page size to improve programming

throughput

100,000 Program/Erase Cycles per Sector Typical

10-Year Data Retention Typical

Operating Temperature Ranges

– Wireless (-25°C to +85°C)

Package options

– 48-pin TSOP

– 137-ball FBGA MCP Compatible

100% Valid Blocks

Performance Characteristics

Legend:

b = bit, B = Byte, K = 1024, M = 1048576

S30MS-P ORNAND

S30MS01GP, S30MS512P

1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on

Data Sheet (Preliminary)

Read Access Times (Maximum)

Full Page Random Access

25 µs

Partial Page Random Access

8 µs

Serial Read

25ns

Current Consumption (typical)

Read Current

40 mA

Erase Current

60 mA

Program Current

60 mA

Standby Current

10 uA

Read, Program and Erase Performance (typical)

x8

x16

Program

2.3 MB/s

2.4 MB/s

Erase

2.7 MB/s

2.7 MB/s

Full Page Read

26.7 MB/s

40.1 MB/s

Partial Page Read

24.3 MB/s

34.9 MB/s