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PBSS5420D Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBSS5420D Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 16 page 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. 1.2 Features s Very low collector-emitter saturation resistance s Ultra low collector-emitter saturation voltage s 4 A continuous collector current s Up to 15 A peak current s High efficiency leading to less heat generation 1.3 Applications s Power management functions s Charging circuits s DC-to-DC conversion s MOSFET gate driving s Power switches (e.g. motors, fans) s TFT backlight inverter 1.4 Quick reference data [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ≤ 0.02. PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 — 7 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −20 V IC collector current (DC) [1] -- −4A ICM peak collector current single pulse; tp ≤ 1ms -- −15 A RCEsat collector-emitter saturation resistance IC = −4A; IB = −400 mA [2] - 5070m Ω |
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Similar Description - PBSS5420D |
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