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PBSS5420D Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBSS5420D
Description  20 V, 4 A PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5420D Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS4420D.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency leading to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s TFT backlight inverter
1.4 Quick reference data
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 01 — 7 April 2005
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−20
V
IC
collector current (DC)
[1] --
−4A
ICM
peak collector current
single pulse;
tp ≤ 1ms
--
−15
A
RCEsat
collector-emitter saturation
resistance
IC = −4A;
IB = −400 mA
[2] -
5070m


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