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BLF1043 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF1043 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2000 Feb 23 4 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.4 K/W unless otherwise specified. Ruggedness in class-AB operation The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) η D (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 25 10 (PEP) >16 >35 ≤−30 CW, class-AB (1-tone) 960 26 25 10 >16 >45 − handbook, halfpage 800 1000 30 5 10 15 20 0 25 60 10 20 30 40 0 50 MGS995 840 880 920 960 f (MHz) η D (%) η D Gp (dB) Gp Fig.2 Power gain and efficiency as functions of frequency, typical values. Class-AB operation; VDS = 26 V; IDQ = 80mA; PL = 10 W (PEP). |
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