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NTB35N15 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTB35N15
Description  Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTB35N15 Datasheet(HTML) 2 Page - ON Semiconductor

 
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NTB35N15
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
240
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 150 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 150 Vdc, TJ = 125°C)
IDSS
5.0
50
mAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
±100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.9
–8.56
4.0
Vdc
mV/
°C
Static Drain–to–Source On–State Resistance
(VGS = 10 Vdc, ID = 18.5 Adc)
(VGS = 10 Vdc, ID = 18.5 Adc, TJ = 125°C)
RDS(on)
0.042
0.050
0.120
W
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 18.5 Adc)
VDS(on)
1.55
1.78
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 18.5 Adc)
gFS
26
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f
10MH )
Ciss
2275
3200
pF
Output Capacitance
f = 1.0 MHz)
Coss
450
650
Reverse Transfer Capacitance
Crss
90
175
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn–On Delay Time
(VDD = 120 Vdc, ID = 37 Adc,
V
10 Vd
td(on)
20
35
ns
Rise Time
VGS = 10 Vdc,
RG = 9.1 W)
tr
125
225
Turn–Off Delay Time
RG = 9.1 W)
td(off)
90
175
Fall Time
tf
120
210
Total Gate Charge
(VDS = 120 Vdc, ID = 37 Adc,
V
10 Vd )
Qtot
70
100
nC
Gate–to–Source Charge
VGS = 10 Vdc)
Qgs
14
Gate–to–Drain Charge
Qgd
32
BODY–DRAIN DIODE RATINGS (Note 3)
Diode Forward On–Voltage
(IS = 37 Adc, VGS = 0 Vdc)
(IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1.00
0.88
1.5
Vdc
Reverse Recovery Time
(IS = 37 Adc, VGS = 0 Vdc,
dI /dt
100 A/
)
trr
170
ns
dIS/dt = 100 A/ms)
ta
112
tb
58
Reverse Recovery Stored Charge
QRR
1.14
mC
3. Pulse Test: Pulse Width = 300
ms max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.


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