Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF HTML

NTB35N15 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTB35N15
Description  Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK
Download  12 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo 

NTB35N15 Datasheet(HTML) 1 Page - ON Semiconductor

 
Zoom Inzoom in Zoom Outzoom out
 1 / 12 page
background image
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 2
1
Publication Order Number:
NTB35N15/D
NTB35N15
Product Preview
Power MOSFET
37 Amps, 150 Volts
N–Channel Enhancement–Mode D2PAK
Features
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the D2PAK Package
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
150
Vdc
Drain–to–Source Voltage (RGS = 1.0 MW)
VDGR
150
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
VGS
VGSM
"20
"40
Vdc
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Pulsed (Note 2)
ID
ID
IDM
37
23
111
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (Note 1)
PD
178
1.43
2.0
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 W)
EAS
700
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1)
RqJC
RqJA
RqJA
0.7
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in2).
2. Pulse Test: Pulse Width = 10
ms, Duty Cycle = 2%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
37 AMPERES
150 VOLTS
50 m
W @ VGS = 10 V
Device
Package
Shipping
ORDERING INFORMATION
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
NTB35N15 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTB35N15
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
4
D2PAK
CASE 418B
STYLE 2
NTB35N15
D2PAK
50 Units/Rail
NTB35N15T4
D2PAK
800/Tape & Reel
http://onsemi.com


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn