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SIA911DJ Datasheet(PDF) 1 Page - Vaishali Semiconductor |
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SIA911DJ Datasheet(HTML) 1 Page - Vaishali Semiconductor |
1 / 7 page Vishay Siliconix SiA911DJ New Product Document Number: 74329 S-62027-Rev. A, 16-Oct-06 www.vishay.com 1 Dual P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Qg (Typ) - 20 0.094 at VGS = - 4.5 V - 4.5a 4.9 nC 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V - 4.5a Marking Code X X X D C X Lot Traceability and Date code Part # code S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET S1 D1 G2 S2 G1 D2 1 6 5 4 2 3 2.05 mm 2.05 mm PowerPAK SC-70-6 Dual D1 D2 Ordering Information: SiA911DJ-T1-E3 (Lead (Pb)-free) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.5a A TC = 70 °C - 4.5a TA = 25 °C - 3.6b, c TA = 70 °C - 2.9b, c Pulsed Drain Current IDM - 8 Continuous Source-Drain Diode Current TC = 25 °C IS - 4.5a TA = 25 °C - 1.6b, c Maximum Power Dissipation TC = 25 °C PD 6.5 W TC = 70 °C 5 TA = 25 °C 1.9b, c TA = 70 °C 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 sec RthJA 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 RoHS COMPLIANT |
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