2-539
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
GND
GND
RF OUT
VCC2
PDET_OUT
VCC3
GND
GND
RF IN
VCC1
Bias
Pwr
Det
12
11
1
2
3
4
5
10
9
8
7
6
RF3300-2
3V 900MHz LINEAR AMPLIFIER MODULE
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
The RF3300-2 is a high-power, high-efficiency linear
amplifier module targeting 3V handheld systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS handheld digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3300-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50
Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The RF3300-2 con-
tains a temperature compensating bias circuit to improve
performance over temperature.
• Single 3V Supply with Internal VREF
• Integrated Power Detect Circuit
• 27dB Linear Gain
• 55mA Idle Current
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
RF3300-2
3V 900MHz Linear Amplifier Module
RF3300-2 PCBA
Fully Assembled Evaluation Board
0
Rev A6 030124
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
Dimensions in mm.
1
7.375 TYP
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.000
0.125 TYP
Bottom View
Package Style: Module (6mmx7.5mm)
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