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IXFR15N80Q Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFR15N80Q Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page 2 - 2 © 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V; I D = 7.5A Note 2 8 16 S C iss 4300 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 360 pF C rss 60 pF t d(on) 18 ns t r V GS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 27 ns t d(off) R G = 1 W (External), 53 ns t f 16 ns Q g(on) 90 nC Q gs V GS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 20 nC Q gd 30 nC R thJC 0.50 K/W R thCK 0.15 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 15 A I SM Repetitive, Note 1 60 A V SD I F = Is, 100A, VGS = 0 V, Note 2 1.5 V t rr 250 ns Q RM 0.8 mC I RM 7.5 A I F = Is, -di/dt = 100 A/ms, VR = 100 V Note: 1. Pulse width limited by T JM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % IXFR 15N80Q ISOPLUS 247 (IXFR) OUTLINE Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 1 2.29 2.54 .090 .100 A 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 S 13.21 13.72 .520 .540 T 15.75 16.26 .620 .640 U 1.65 3.03 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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