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WED8L24258V Datasheet(PDF) 2 Page - White Electronic Designs Corporation

Part No. WED8L24258V
Description  Asynchronous SRAM, 3.3V, 256Kx24
Download  5 Pages
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Maker  WEDC [White Electronic Designs Corporation]
Homepage  http://www.whiteedc.com
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WED8L24258V Datasheet(HTML) 2 Page - White Electronic Designs Corporation

   
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White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
July 2002 Rev. 0A
ECO #15432
WED8L24258V
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
NOTE: For TEHQZ,TGHQZ and TWLQZ, Figure 3
ABSOLUTE MAXIMUM RATINGS
AC TEST CONDITIONS
RECOMMENDEDDCOPERATINGCONDITIONS
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
OutputLoad
Figure 2
Voltage on any pin relative to VSS
-0.5V to 4.6V
OperatingTemperatureTA(Ambient)
Commercial
0°C to + 70°C
Industrial
-40°C to +85°C
StorageTemperature
-55°C to +125°C
Power Dissipation
1.5 Watts
Output Current.
50 mA
Parameter
Sym
Min
Typ
Max Units
Supply Voltage
VCC
3.135
3.3
3.465
V
Supply Voltage
VSS
000V
Input High Voltage
VIH
2.2
-- VCC+0.3 V
Input Low Voltage
VIL
-0.3
--
0.8
V
FIG. 2
FIG. 3
(f=1.0MHz, VIN=VCC or VSS)
These parameters are sampled, not 100% tested.
DCELECTRICALCHARACTERISTICS
TRUTHTABLE
CAPACITANCE
GE0
E2
E3
W
Mode
Output
Power
X
H
H
H
X
Standby
High Z ICC2,ICC3
H
L
L
L
H
OutputDeselect
High Z
ICC1
L
L
L
L
H
Read (24 bit)
DOUT
ICC1
L
LHHH
Read
DQ0-7
ICC1
LH
L
H
H
Read
DQ8-15
ICC1
LH
H
L
H
Read
DQ16-23
ICC1
X
L
L
L
L
Write (24 bit)
DIN
ICC1
X
L
H
H
L
Write
DQ0-7
ICC1
X
H
L
H
L
Write
DQ8-15
ICC1
X
H
H
L
L
Write
DQ16-23
ICC1
Parameter
Sym
Max
Unit
Address Lines
CA
8
pF
DataLines
CD/Q
10pF
Write & Output Enable Lines
W, G
8
pF
Chip Enable Lines
EØ, E2, E3
8
pF
353
5 pF
DOUT
319
VCC
RL = 50
VL = 1.5V
Q
Z0 = 50
Z0 = 50
65 pF
Parameter
Sym
Conditions
Min
Max
Units
10ns
12-15ns
Operating Power Supply Current
ICC1
W= VIL, II/O = 0
mA,
50
0480mA
Min Cycle
Standby (TTL) Supply Current
ICC2
E > VIH, VIN < VIL or
150150mA
VIN > VIH, f=ØMHz
Full Standby CMOS
ICC3
E > VCC-0.2V
90
90
mA
Supply Current
VIN > VCC-0.2V or
VIN < 0.2V
Input Leakage Current
ILI
VIN = 0V to VCC
±10
±10
µA
Output Leakage Current
ILO
V I/O = 0V to VCC
±10
±10
µA
Output High Volltage
VOH
IOH = -4.0mA
2.4
V
Output Low Voltage
VOL
IOL = 4.0mA
0.4
0.4
V


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