HY62UF16800B-C datasheet(2/11 Pages) HYNIX

Part #	HY62UF16800B-C

Description	512Kx16bit full CMOS SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

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HY62UF16800B

Rev.02/Apr. 2002

2

DESCRIPTION

The HY62UF16800B is a high speed, super low

power and 8Mbit full CMOS SRAM organized as

524,288 words by 16bits. The HY62UF16800B

uses

high

performance

full

CMOS

process

technology and is designed for high speed and

low power circuit technology. It is particularly well-

suited for the high density low power system

application. This device has a data retention

mode that guarantees data to remain valid at a

minimum power supply voltage of 1.2V.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Battery backup(LL/SL-part)

- 1.2V(min) data retention

• Standard pin configuration

- 48-FBGA

Product

Voltage

Speed

Operation

Standby Current(uA)

Temperature

No.

(V)

(ns)

Current/Icc(mA)

LL

(

°C)

HY62UF16800B-C

2.7~3.3

55/70/85

3

15

0~70

HY62UF16800B-I

2.7~3.3

55/70/85

3

15

-40~85

Note 1. C : Commercial, I : Industrial

2. Current value is max.

PIN CONNECTION ( Top View )

BLOCK DIAGRAM

PIN DESCRIPTION

Pin Name

Pin Function

Pin Name

Pin Function

/CS1, CS2

Chip Select

I/O1~I/O16

Data Inputs / Outputs

/WE

Write Enable

A0~A18

Address Inputs

/OE

Output Enable

Vcc

Power(2.7V~3.3V)

/LB

Lower Byte Control(I/O1~I/O8)

Vss

Ground

/UB

Upper Byte Control(I/O9~I/O16)

NC

No Connection

MEMORY ARRAY

512K x 16

ROW

DECODER

I/O1

I/O8

I/O9

I/O16

A18

/CS1

/OE

/LB

/UB

/WE

CS2

1

2

3

4

5

6

A

B

C

D

E

F

G

H

/LB

IO9

IO10

/OE

A0

A1

A2

CS2

/UB

A3

A4

/CS1

IO1

IO11 A5

A6

IO2

IO3

Vss

IO12 A17

A7

IO4

Vcc

IO13

NC

A16

IO5

Vss

IO15 IO14 A14

A15

IO6

IO7

IO16 NC

A12

A13

/WE

IO8

A18

A8

A9

A10

A11

NC

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