HY62SF16804A-I datasheet(2/10 Pages) HYNIX

Part #	HY62SF16804A-I

Description	512Kx16bit full CMOS SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY62SF16804A

Rev.11 /Jan. 2002

2

DESCRIPTION

The HY62SF16804A is a high speed, super low

power and 8Mbit full CMOS SRAM organized as

524,288 words by 16bits. The HY62SF16804A

uses

high

performance

full

CMOS

process

technology and is designed for high speed and low

power circuit technology. It is particularly well-

suited for the high density low power system

application. This device has a data retention mode

that guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Battery backup(LL/SL-part)

- 1.2V(min) data retention

• Standard pin configuration

- 48-uBGA

Product

Voltage

Speed

Operation

Standby Current(uA)

Temperature

No.

(V)

(ns)

Current/Icc(mA)

LL

SL

(

°C)

HY62SF16804A-C

1.7~2.3

70/85/100

3

25

8

0~70

HY62SF16804A-I

1.7~2.3

70/85/100

3

25

8

-40~85

Note 1. C : Commercial, I : Industrial

2. Current value is max.

PIN CONNECTION ( Top View )

BLOCK DIAGRAM

PIN DESCRIPTION

Pin Name

Pin Function

Pin Name

Pin Function

/CS

Chip Select

I/O1~I/O16

Data Inputs / Outputs

/WE

Write Enable

A0~A18

Address Inputs

/OE

Output Enable

Vcc

Power(1.7V~2.3V)

/LB

Lower Byte Control(I/O1~I/O8)

Vss

Ground

/UB

Upper Byte Control(I/O9~I/O16)

NC

No Connection

MEMORY ARRAY

512K x 16

ROW

DECODER

I/O1

I/O8

I/O9

I/O16

A1,A2

A4,A6~A7

A9

A12

A15~A18

A8

A10

A13

A14

A0

A3

A5

A11

/CS

/OE

/LB

/UB

/WE

/LB

IO9

IO10

/OE A0

A1

A2

NC

/UB A3

A4

/CS IO1

IO11 A5

A6

IO2

IO3

Vss IO12 A17 A7

IO4

Vcc

Vcc IO13 Vss A16 IO5

Vss

IO15 IO14 A14 A15 IO6

IO7

IO16 NC

A12 A13 /WE IO8

A18 A8

A9

A10 A11 NC

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