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HY62SF16406E-SF Datasheet(PDF) 6 Page - Hynix Semiconductor |
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HY62SF16406E-SF Datasheet(HTML) 6 Page - Hynix Semiconductor |
6 / 11 page HY62SF16406E Series Rev.02 / May.02 5 TIMING DIAGRAM READ CYCLE 1(Note 1,4) READ CYCLE 2(Note 1,2,4) tRC tAA Data Valid Previous Data tOH tOH ADDR Data Out READ CYCLE 3(Note 1,2,4) /CS1 /UB, /LB tACS Data Valid tCLZ(3) tCHZ(3) Data Out CS2 Notes: 1. Read Cycle occurs whenever a high on the /WE and /OE is low, while /UB and/or /LB and /CS1 and CS2 are in active status. 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS1 in high for the standby, low for active CS2 in low for the standby, high for active. /UB and /LB in high for the standby, low for active Data Valid High-Z ADDR Data Out tRC /CS1 CS2 /UB ,/ LB /OE tAA tACS tBA tOE tCLZ(3) tBLZ(3) tOLZ(3) tOH tCHZ(3) tBHZ(3) tOHZ(3) |
Similar Part No. - HY62SF16406E-SF |
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Similar Description - HY62SF16406E-SF |
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