HY29DS162 datasheet(25/48 Pages) HYNIX

Part #	HY29DS162

Description	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

Download	48 Pages

Scroll/Zoom	100%

Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

Logo

25 / 48 page

25

HY29DS162/HY29DS163

r1.3/Apr 01

WRITE OPERATION STATUS

The HY29DS16x provides a number of facilities

to determine the status of a program or erase op-

eration. These are the RY/BY# (Ready/Busy#)

pin and certain bits of a status word which can be

read from the device during the programming and

erase operations. Table 16 summarizes the sta-

tus indications and further detail is provided in the

subsections which follow.

RY/BY# - Ready/Busy#

RY/BY# is an open-drain output pin that indicates

whether a programming or erase Automatic Algo-

rithm is in progress or has completed. A pull-up

resistor to V

CC is required for proper operation. RY/

BY# is valid after the rising edge of the final WE#

pulse in the corresponding command sequence,

including during the sector erase time-out.

If the output is Low (busy), the device is actively

erasing or programming, including programming

while in the Erase Suspend mode. If the output is

High (ready), the device has completed the op-

eration and is ready to read array data, is in the

standby mode, or at least one bank is in the erase-

suspend read mode.

Table 16. Write and Erase Operation Status Summary

Notes:

1. A valid address within the bank where an Automatic algorithm is in progress is required when reading status information

except RY/BY#. For a programming operation, the address used for the read cycle should be the program address. For

an erase operation, the address used for the read cycle should be any address within a non-protected sector marked for

erasure (any address for the chip erase operation).

2. DQ[5] status switches to a ‘1’ when a program or erase operation exceeds the maximum timing limit.

3. A ‘1’ during sector erase indicates that the 50 µs time-out has expired and active erasure is in progress.

DQ[3] is not

applicable to the chip erase operation.

4. Equivalent to ‘No Toggle’ because data is obtained in this state. For ‘Erase Completed’,

5. Data (DQ[7:0]) = 0xFF immediately after erasure.

6. Programming can be done only in a non-suspended sector (a sector not specified for erasure).

e

d

o

M

n

o

i

t

a

r

e

p

O

]

7

[

Q

D

1

]

6

[

Q

D

]

5

[

Q

D

]

3

[

Q

D

]

2

[

Q

D

1

#

Y

B

/

Y

R

l

a

m

r

o

N

s

e

r

g

o

r

p

n

i

g

n

i

m

a

r

g

o

r

P#

]

7

[

Q

De

l

g

o

T1

/

0

2

A

/

NA

/

N0

d

e

t

e

l

p

m

o

c

g

n

i

m

a

r

g

o

r

Pa

t

a

Da

t

a

D

4

a

t

a

Da

t

a

Da

t

a

D1

s

e

r

g

o

r

p

n

i

e

s

a

r

E0

e

l

g

o

T1

/

0

2

1 3

e

l

g

o

T0

d

e

t

e

l

p

m

o

c

e

s

a

r

E

5

a

t

a

Da

t

a

D

4

a

t

a

Da

t

a

Da

t

a

D

4

1

e

s

a

r

E

d

n

e

p

s

u

S

d

e

d

n

e

p

s

u

s

e

s

a

r

e

n

i

h

t

i

w

d

a

e

R

r

o

t

c

e

s

1e

l

g

o

t

o

N0

A

/

Ne

l

g

o

T1

e

s

a

r

e

-

n

o

n

i

h

t

i

w

d

a

e

R

r

o

t

c

e

s

d

e

d

n

e

p

s

u

s

a

t

a

Da

t

a

Da

t

a

Da

t

a

Da

t

a

D1

s

e

r

g

o

r

p

n

i

g

n

i

m

a

r

g

o

r

P

6

#

]

7

[

Q

De

l

g

o

T1

/

0

2

A

/

NA

/

N0

d

e

t

e

l

p

m

o

c

g

n

i

m

a

r

g

o

r

P

6

a

t

a

Da

t

a

D

4

a

t

a

Da

t

a

Da

t

a

D1

DQ[7] - Data# Polling

The Data# Polling bit, DQ[7], indicates to the host

system whether an Automatic Algorithm is in

progress or completed, or whether a bank is in

Erase Suspend mode. Data# Polling is valid after

the rising edge of the final WE# pulse in the pro-

gram or erase command sequence.

While a programming operation is in progress, the

device outputs the complement of the value pro-

grammed to DQ[7]. When the programming op-

eration is complete, the device outputs the value

programmed to DQ[7]. If a program operation is

attempted within a protected sector, Data# Poll-

ing on DQ[7] is active for approximately 1 µs, then

the device returns to reading array data. The host

system must do a read at the program address to

obtain valid programming status information on this

bit.

During an erase operation, Data# Polling produces

a “0” on DQ[7]. When the erase operation is com-

plete, or if the bank enters the Erase Suspend

mode, Data# Polling produces a “1” on DQ[7]. The

host must read at an address within any of the

non-protected sectors designated for erasure to

Similar Part No. - HY29DS162

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HY29DS322	289Kb / 6P	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
Hynix Semiconductor	HY29DS323	289Kb / 6P	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

More results

Similar Description - HY29DS162

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HY29DL162	548Kb / 48P	16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
	HY29DS322	289Kb / 6P	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
	HY29LV160	517Kb / 48P	16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
ATMEL Corporation	AT49F1604	213Kb / 18P	16-Megabit 1M x 16/2M x 8 5-volt Only Flash Memory
	AT49BV1604A	410Kb / 26P	16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
	AT49BV16X4	304Kb / 18P	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
	AT49BV162A	288Kb / 29P	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
	AT49BV163D	524Kb / 27P	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
	AT49BV163AT-70TU	532Kb / 29P	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
	AT49BV160	308Kb / 29P	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

More results

HY29DS162 Datasheet(PDF) 25 Page - Hynix Semiconductor

HY29DS162 Datasheet(HTML) 25 Page - Hynix Semiconductor

Similar Part No. - HY29DS162

Similar Description - HY29DS162

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

Datasheet Download

Link URL