IS42S16100 datasheet(4/78 Pages) ISSI

Part #	IS42S16100

Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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IS42S16100

ISSI®

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

11/01/01

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Rating

Unit

VCC MAX

Maximum Supply Voltage

–1.0 to +4.6

V

VCCQ MAX

Maximum Supply Voltage for Output Buffer

–1.0 to +4.6

V

VIN

Input Voltage

–1.0 to +4.6

V

VOUT

Output Voltage

–1.0 to +4.6

V

PD MAX

Allowable Power Dissipation

1

W

ICS

Output Shorted Current

50

mA

TOPR

Operating Temperature

Com

0 to +70

°C

Ind.

-40 to +85

°C

TSTG

Storage Temperature

–55 to +150

°C

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC, VCCQ

Supply Voltage

3.0

3.3

3.6

V

VIH

Input High Voltage(3)

2.0

—

VDD + 0.3

V

VIL

Input Low Voltage(4)

-0.3

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol

Parameter

Typ.

Max.

Unit

CIN1

Input Capacitance: A0-A11

—

4

pF

CIN2

Input Capacitance: (CLK, CKE,

CS, RAS, CAS, WE, LDQM, UDQM)

—

4

pF

CI/O

Data Input/Output Capacitance: I/O0-I/O15

—

5

pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. All voltages are referenced to GND.

3. VIH (max) = VCCQ + 2.0V with a pulse width

≤ 3 ns.

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