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HSM226S Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HSM226S
Description  Silicon Schottky Barrier Diode for High speed switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HSM226S Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HSM226S
Rev.1.00, Jan.21.2004, page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
25
V
Non-Repetitive peak forward surge current
IFSM *
1 *2
200
mA
forward current
IF *
2
50
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Notes: 1. 10 ms sine wave 1 pulse
2. Two device total
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
VF1
0.33
IF = 1 mA
Forward voltage
VF2
0.38
V
IF = 5 mA
Reverse current
IR
0.45
µA
VR = 20 V
Capacitance
C
2.80
pF
VR = 1 V, f = 1 MHz
Note:
Per one device


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