Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

STT5NF30L Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STT5NF30L
Description  N-CHANNEL 30V - 0.039W - 4A SOT23-6L STripFET II POWER MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STT5NF30L Datasheet(HTML) 3 Page - STMicroelectronics

  STT5NF30L Datasheet HTML 1Page - STMicroelectronics STT5NF30L Datasheet HTML 2Page - STMicroelectronics STT5NF30L Datasheet HTML 3Page - STMicroelectronics STT5NF30L Datasheet HTML 4Page - STMicroelectronics STT5NF30L Datasheet HTML 5Page - STMicroelectronics STT5NF30L Datasheet HTML 6Page - STMicroelectronics STT5NF30L Datasheet HTML 7Page - STMicroelectronics STT5NF30L Datasheet HTML 8Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
3/8
STT5NF30L
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =10V , ID =2 A
3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V,f= 1MHz, VGS = 0
330
90
40
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =15 V,ID =2 A
RG = 4.7Ω VGS =4.5 V
(see test circuit, Figure 3)
11
100
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24 V,ID =4 A,
VGS =5V
6.5
3.6
2
9nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-Off Delay Time
Fall Time
VDD =15 V,ID =2 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
25
22
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
VSD (1)
Forward On Voltage
ISD = 4 A, VGS =0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100 A/µs,
VDD =20 V,Tj = 150°C
(see test circuit, Figure 5)
35
25
14
ns
nC
A


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn