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2N2905A Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N2905A
Description  SMALL SIGNAL PNP TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2905A Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
TO-39
TO-18
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
250
83.3
375
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
VCB = -50 V
Tj = 150
o C
-10
-10
nA
µA
ICEX
Collector Cut-off
Current (VBE = 0.5V)
VCE = -30 V
-50
nA
IBEX
Base Cut-off Current
(VBE = 0.5V)
VCE = -30 V
-50
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10
µA
-60
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
-60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10
µA
-5
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -150 mA
IB = -15 mA
IC = -500 mA
IB = -50 mA
-0.4
-1.6
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -150 mA
IB = -15 mA
IC = -500 mA
IB = -50 mA
-1.3
-2.6
V
V
hFE
DC Current Gain
IC = -0.1 mA
VCE = -10 V
IC = -1 mA
VCE = -10 V
IC = -10 mA
VCE = -10 V
IC = -150 mA
VCE = -10 V
IC = -500 mA
VCE = -10 V
75
100
100
100
50
300
fT
Transition Frequency
VCE = -20 V
f = 100 MHz
IC = -50 mA
200
MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = -2 V
f = 1MHz
30
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = -10 V
f = 1MHz
8
pF
td
∗∗
Delay Time
VCC = -30 V
IC = -150 mA
IB1 = -15 mA
10
ns
tr
∗∗
Rise Time
VCC = -30 V
IC = -150 mA
IB1 = -15 mA
40
ns
ts
∗∗
Storage Time
VCC = -6 V
IC = -150 mA
IB1 = -IB2 = -15 mA
80
ns
tf
∗∗
Fall Time
VCC = -6 V
IC = -150 mA
IB1 = -IB2 = -15 mA
30
ns
ton
∗∗
Turn-on Time
VCC = -30 V
IC = -150 mA
IB1 = -15 mA
45
ns
toff
∗∗
Turn-off Time
VCC = -6 V
IC = -150 mA
IB1 = -IB2 = -15 mA
100
ns
* Pulsed: Pulse duration = 300
µs, duty cycle ≤ 1 %
** See test circuit
2N2905A/2N2907A
2/7


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