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TPS62420

SLVS676B – JUNE 2006 – REVISED OCTOBER 2006

ELECTRICAL CHARACTERISTICS (continued)

V

25

°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SWITCH

P-Channel MOSFET On-resistance,

280

620

m

Ω

Converter 1,2

P-Channel leakage current

1

µA

N-Channel MOSFET On-resistance

200

450

m

Ω

Converter 1,2

Leakage Current into SW1/SW2 Pin Includes N-Chanel leakage currnet,

6

7.5

µA

Forward Current

OUT1 600mA

2.5V

≤ V

0.85

1.0

1.15

A

Limit PMOS and

OUT2 1000mA

1.19

1.4

1.61

NMOS

Thermal shutdown

Increasing junction temperature

150

°C

Thermal shudown hysteresis

Decreasing junction temperature

20

°C

OSCILLATOR

fSW

Oscillator frequency

2.5V

≤ VIN ≤ 6.0V

2.0

2.25

2.5

MHz

OUTPUT

Adjustable output votage range

0.6

V

Reference voltage

600

mV

Voltage positioning active, MODE/DATA = GND,

1.01x

device operating in PFM mode, VIN = 2.5V to

–1.5%

2.5%

DC output voltage accuracy PFM

mode, adjustable and fixed output

MODE/DATA = GND; device operating in PWM

–1%

0%

1%

–1%

0%

1%

DC output voltage load regulation

PWM operation mode

0.5

%/A

Start-up time

170

µs

750

µs

(4)

At pins SW1 and SW2 an internal resistor of 1M

Ω is connected to GND

(5)

Output voltage specification does not include tolerance of external voltage programming resistors

(6)

Configuration L typ 2.2

µH, C

capacitance of the output capacitor, larger output capacitors lead to tighter output voltage tolerance

(7)

(8)

(9)

This time is valid if one converter turns from shutdown mode (EN2 = 0) to active mode (EN2 =1) AND the other converter is already

enabled (e.g., EN1 = 1). In case both converters are turned from shutdown mode (EN1 and EN2 = low) to active mode (EN1 and/or

EN2=1) a value of typ 80

µs for ramp up of internal circuits needs to be added. After t

4

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