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BFG17A Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BFG17A
Description  NPN 3 GHz wideband transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG17A Datasheet(HTML) 2 Page - NXP Semiconductors

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1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN
DESCRIPTION
Code: E6
1
collector
2
base
3
emitter
4
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
12
3
4
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
25
V
VCEO
collector-emitter voltage
open base
−−
15
V
IC
DC collector current
−−
50
mA
Ptot
total power dissipation
up to Ts =85 °C; note 1
−−
300
mW
hFE
DC current gain
IC = 25 mA; VCE =1V;
Tamb =25 °C
20
150
fT
transition frequency
IC = 25 mA; VCE =5V;
f = 500 MHz; Tamb =25 °C
2.8
GHz
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
0.4
pF
GUM
maximum unilateral power gain
IC = 15 mA; VCE =10V;
f = 800 MHz; Tamb =25 °C
15
dB
F
noise figure
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb =25 °C; ZS =60 Ω; bs = opt.
2.5
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
50
mA
Ptot
total power dissipation
up to Ts =85 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
175
°C


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