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IXFA3N80 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFA3N80
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFA3N80 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFA3N80 Datasheet HTML 1Page - IXYS Corporation IXFA3N80 Datasheet HTML 2Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
TestConditions
Maximum Ratings
V
DSS
T
J = 25°C to 150°C
800
V
V
DGR
T
J = 25°C to 150°C; RGS = 1 MW
800
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
3.6
A
I
DM
T
C = 25°C, pulse width limited by TJM
14.4
A
I
AR
T
C = 25°C
3.6
A
E
AR
T
C = 25°C
10
mJ
E
AS
400
mJ
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS,
5
V/ns
T
J £ 150°C, RG = 2 W
P
D
T
C = 25°C
100
W
T
J
-55 to +150
°C
T
JM
150
°C
T
stg
-55 to +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
2
g
N-ChannelEnhancementMode
Avalanche Rated, Low Q
g, High dv/dt
Features
l International standard packages
l Low R
DS (on)
l Rated for unclamped Inductive load
Switching (UIS)
Advantages
l Easy to mount
l Space savings
l High power density
Symbol
TestConditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 1 mA
800
V
V
GS(th)
V
DS = VGS, ID = 1 mA
2.5
4.5
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
T
J
= 25°C50
mA
V
GS = 0 V
T
J
= 125°C1
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
3.6
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
HiPerFETTM
Power MOSFETs
V
DSS
= 800 V
I
D25
= 3.6 A
R
DS(on)
= 3.6 W
t
rr £ 250 ns
Preliminary data sheet
G
S
TO-263 (IXFA)
G D
S
TO-220 (IXFP)
G = Gate
D
= Drain
S = Source
TAB = Drain
D (TAB)
D (TAB)
98746 (09/00)
IXFA 3N80
IXFP 3N80


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