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IXFA3N80 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXFA3N80
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFA3N80 Datasheet(HTML) 2 Page - IXYS Corporation

  IXFA3N80 Datasheet HTML 1Page - IXYS Corporation IXFA3N80 Datasheet HTML 2Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
TestConditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS = 20 V; ID = 0.5 • ID25, pulse test
2.5
3.4
S
C
iss
685
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
73
pF
C
rss
16
pF
t
d(on)
12
ns
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
11
ns
t
d(off)
R
G = 12 W (External),
25
ns
t
f
14
ns
Q
g(on)
24
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
6nC
Q
gd
9nC
R
thJC
1.25
K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
TestConditions
min.
typ. max.
I
S
V
GS = 0 V
3.6
A
I
SM
Repetitive; pulse width limited by T
JM
14.4
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
250
ns
Q
RM
I
F = IS, -di/dt = 100 A/ms, VR = 100 V
0.52
mC
I
RM
1.8
A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Bottom Side
TO-220 (IXFP) Outline
IXFA 3N80
IXFP 3N80


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