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HSCH-9151 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part # HSCH-9151
Description  GaAs Beam Lead Schottky Barrier Diodes
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Manufacturer  HP [Agilent(Hewlett-Packard)]
Direct Link  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HSCH-9151 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

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Applications
This line of Schottky diodes is
optimized for use in mixer
applications at millimeter wave
frequencies. Some suggested
mixer types are single ended and
single balanced for the single and
series pair. The anti-parallel pair
is ideal for harmonic mixers.
Assembly Techniques
Diodes are ESD sensitive. ESD
preventive measures must be em
ployed in all aspects of storage,
handling, and assembly.
Diode ESD precautions, handling
considerations, and bonding
methods are critical factors in
successful diode performance
and reliability.
Agilent application note #55,
“Beam Lead Diode Bonding and
Handling Procedures” provides
basic information on these
subjects.
Maximum Ratings
Power Dissipation at T
LEAD = 25° C ........................... 75 mW per junction
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
Operating Temperature .................................................... -65
°C to +150°C
Storage Temperature ........................................................ -65
°C to +150°C
Mounting Temperature ........................................... 235
°C for 10 seconds
Minimum Lead Strength ................................................................. 6 grams
Electrical Specifications at T
A
= 25
°C
Part Number
Symbol
Parameters and
HSCH-9101
HSCH-9201
HSCH-9251
Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Cj
[1]
Junction Capacitance
pF
0.040
0.050
0.040
0.050
0.040
V
R = 0 V, f = 1 MHz
∆C
j
[1]
Junction Capacitance Variation
pF
0.005
0.010
V
R = 0 V, f = 1 MHz
R
S
[2]
Series Resistance
W
6
6
6
VF1
Forward Voltage
mV
700
800
700
800
700
800
I
F = 1 mA
VF10
Forward Voltage
mV
800
850
800
850
800
850
I
F = 10 mA
∆V
F
Forward Voltage Variation
mV
15
15
IF = 1 mA and 10 mA
V
BR
Reverse Breakdown Voltage
V
4.5
4.5
VR = VBR measure IR ≤ 10 µA
(per junction)
Notes:
1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF).
2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6
Ω.


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