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HSCH-9151 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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HSCH-9151 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 4 page 2 Applications This line of Schottky diodes is optimized for use in mixer applications at millimeter wave frequencies. Some suggested mixer types are single ended and single balanced for the single and series pair. The anti-parallel pair is ideal for harmonic mixers. Assembly Techniques Diodes are ESD sensitive. ESD preventive measures must be em ployed in all aspects of storage, handling, and assembly. Diode ESD precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. Agilent application note #55, “Beam Lead Diode Bonding and Handling Procedures” provides basic information on these subjects. Maximum Ratings Power Dissipation at T LEAD = 25° C ........................... 75 mW per junction Measured in an infinite heat sink derated linearly to zero at maximum rated temperature Operating Temperature .................................................... -65 °C to +150°C Storage Temperature ........................................................ -65 °C to +150°C Mounting Temperature ........................................... 235 °C for 10 seconds Minimum Lead Strength ................................................................. 6 grams Electrical Specifications at T A = 25 °C Part Number Symbol Parameters and HSCH-9101 HSCH-9201 HSCH-9251 Test Conditions Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Cj [1] Junction Capacitance pF 0.040 0.050 0.040 0.050 0.040 V R = 0 V, f = 1 MHz ∆C j [1] Junction Capacitance Variation pF 0.005 0.010 V R = 0 V, f = 1 MHz R S [2] Series Resistance W 6 6 6 VF1 Forward Voltage mV 700 800 700 800 700 800 I F = 1 mA VF10 Forward Voltage mV 800 850 800 850 800 850 I F = 10 mA ∆V F Forward Voltage Variation mV 15 15 IF = 1 mA and 10 mA V BR Reverse Breakdown Voltage V 4.5 4.5 VR = VBR measure IR ≤ 10 µA (per junction) Notes: 1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF). 2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 Ω. |
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